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AlGaAs/GaAs pnp heterojunction bipolar transistor with carbon-doped collector and emitter grown by atomic layer epitaxy

AlGaAs/GaAs pnp heterojunction bipolar transistor with carbon-doped collector and emitter grown by atomic layer epitaxy

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© The Institution of Electrical Engineers
Published

The first AlGaAs/GaAs pnp heterojunction bipolar transistor (HBT) grown entirely by atomic layer epitaxy (ALE) is reported. Carbon was used as the p-type dopant in the emitter and collector. The use of carbon, with its low diffusivity and the potential for very heavy doping, will lead to reduced emitter and collector resistances in a pnp structure. For the devices reported here, a common emitter current gain over 100 was obtained, with good I/V characteristics.

Inspec keywords: aluminium compounds; III-V semiconductors; semiconductor doping; carbon; gallium arsenide; atomic layer epitaxial growth

Other keywords: HBT; common emitter current gain; atomic layer epitaxy; pnp structure; semiconductors; pnp transistors; ALE; AlGaAs-GaAs:PC; I/V characteristics

Subjects: Epitaxial growth; Semiconductor doping; II-VI and III-V semiconductors; Bipolar transistors

References

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