AlGaAs/GaAs pnp heterojunction bipolar transistor with carbon-doped collector and emitter grown by atomic layer epitaxy

AlGaAs/GaAs pnp heterojunction bipolar transistor with carbon-doped collector and emitter grown by atomic layer epitaxy

For access to this article, please select a purchase option:

Buy article PDF
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Your details
Why are you recommending this title?
Select reason:
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

The first AlGaAs/GaAs pnp heterojunction bipolar transistor (HBT) grown entirely by atomic layer epitaxy (ALE) is reported. Carbon was used as the p-type dopant in the emitter and collector. The use of carbon, with its low diffusivity and the potential for very heavy doping, will lead to reduced emitter and collector resistances in a pnp structure. For the devices reported here, a common emitter current gain over 100 was obtained, with good I/V characteristics.


    1. 1)
      • B. Bayraktaroglu , N. Camilleri , S. Lambert . Microwave performance of npn and pnp AlGaAs/GaAs heterojunction bipolar transistors. Electron. Lett. , 228 - 229
    2. 2)
      • D. Sunderland , P.D. Dapkus . Performance potential of pnp heterojunction bipolar transistors. IEEE Electron Dev. Lett.
    3. 3)
      • J.A. Hutchby . High performance pnp AlGaAs/GaAs heterojunction bipolar transistors: A theoretical analysis. IEEE Electron Dev. Lett.
    4. 4)
      • R. Bhat , J.R. Hayes , E. Colas , R. Esagui . Atomic layer epitaxy grown heterojunction bipolar transistor having a carbondoped base. IEEE Electron Dev. Lett.
    5. 5)
      • H. Ito , T. Kobayashi , T. Ishibashi . Carbon-doped base AlGaAs/GaAs HBTs grown by MOCVD using TMAs. Electron. Lett.
    6. 6)
      • S.P. Denbaars , C.A. Beyler , A. Hariz , P.D. Dapkus . GaAs/AlGaAs quantum well lasers with active regions grown by atomic layer epitaxy. Appl. Phys. Lett.
    7. 7)
      • M. Hashemi , J. Ramdani , B.T. McDermott , K. Reid , S.M. Bedair . Atomic layer epitaxy of planar-doped structures for nonalloyed contacts and field-effect transistor. Appl. Phys. Lett.
    8. 8)
      • S.M. Bedair , B. McDermott , K. Reid , P. Neudec , J. Cooper , M. Mellock . Extremely low leakage GaAs p-i-n junctions and memory capacitors grown by ALE. IEEE Electron Dev. Lett.
    9. 9)
      • J.R. Gong , E. Jung , N.A. El-Masry , S.M. Bedair . Atomic layer epitaxy of AlGaAs. Appl. Phys. Lett.
    10. 10)
      • G.J. Sullivan , M.F. Chang , N.H. Sheng , R.J. Anderson , N.L. Wang , K.C. Wang , J.A. Higgins , P.M. Asbeck . AlGaAs/GaAs pnp HBTs with high maximum frequency of oscillation. IEEE Electron Dev. Lett.

Related content

This is a required field
Please enter a valid email address