The fabrication of an 8 × 8 independently addressable InGaAs/GaAs vertical-cavity surface-emitting laser array based on planar ion-implantation processes is described. The uniformity of laser characteristics across the array under both pulsed and CW operation is discussed. Simultaneous addressing of multiple lasers is demonstrated.
Inspec keywords: semiconductor laser arrays; III-V semiconductors; indium compounds; semiconductor doping; ion implantation; gallium arsenide
Other keywords:
Subjects: Design of specific laser systems; Semiconductor doping; Semiconductor lasers; Lasing action in semiconductors; Doping and implantation of impurities
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