Independently addressable InGaAs/GaAs vertical-cavity surface-emitting laser arrays
Independently addressable InGaAs/GaAs vertical-cavity surface-emitting laser arrays
- Author(s): A. von Lehmen ; C. Chang-Hasnain ; J. Wullert ; L. Carrion ; N. Stoffel ; L. Florez ; J. Harbison
- DOI: 10.1049/el:19910368
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- Author(s): A. von Lehmen 1 ; C. Chang-Hasnain 1 ; J. Wullert 1 ; L. Carrion 1 ; N. Stoffel 1 ; L. Florez 1 ; J. Harbison 1
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View affiliations
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Affiliations:
1: Bellcore, Red Bank, USA
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Affiliations:
1: Bellcore, Red Bank, USA
- Source:
Volume 27, Issue 7,
28 March 1991,
p.
583 – 585
DOI: 10.1049/el:19910368 , Print ISSN 0013-5194, Online ISSN 1350-911X
The fabrication of an 8 × 8 independently addressable InGaAs/GaAs vertical-cavity surface-emitting laser array based on planar ion-implantation processes is described. The uniformity of laser characteristics across the array under both pulsed and CW operation is discussed. Simultaneous addressing of multiple lasers is demonstrated.
Inspec keywords: semiconductor laser arrays; III-V semiconductors; indium compounds; semiconductor doping; ion implantation; gallium arsenide
Other keywords:
Subjects: Design of specific laser systems; Semiconductor doping; Semiconductor lasers; Lasing action in semiconductors; Doping and implantation of impurities
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