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Using an electron cyclotron resonance source in a UHV system, vacuum connected to an adjacent molecular beam epitaxy, carbon doping in GaAs was obtained and applied to the base of a heterojunction Npn bipolar transistor. The devices fabricated on the heterostructures grown as described exhibited current gains of about 50. After subjecting the layers to a 700°C/20 minutes anneal cycle, the newly fabricated devices yielded current gains of about 50 demonstrating their stability.
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