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MBE grown Npn AlGaAs/GaAs bipolar transistors with C p doping by electron cyclotron resonance source activated methane

MBE grown Npn AlGaAs/GaAs bipolar transistors with C p doping by electron cyclotron resonance source activated methane

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© The Institution of Electrical Engineers
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Using an electron cyclotron resonance source in a UHV system, vacuum connected to an adjacent molecular beam epitaxy, carbon doping in GaAs was obtained and applied to the base of a heterojunction Npn bipolar transistor. The devices fabricated on the heterostructures grown as described exhibited current gains of about 50. After subjecting the layers to a 700°C/20 minutes anneal cycle, the newly fabricated devices yielded current gains of about 50 demonstrating their stability.

Inspec keywords: molecular beam epitaxial growth; semiconductor doping; gallium arsenide; aluminium compounds; carbon; III-V semiconductors; heterojunction bipolar transistors

Other keywords: heterojunction Npn bipolar transistor; 700 degC; III-V semiconductors; anneal cycle; current gains; UHV system; AlGaAs-GaAs:C; stability; electron cyclotron resonance source; molecular beam epitaxy; 20 min

Subjects: Semiconductor doping; Bipolar transistors; Epitaxial growth

References

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      • R. Bhat , J.R. Hayes , E. Colas , R. Esagui . Atomic layer epitaxy grown heterojunction bipolar transistor having a carbondoped base. IEEE Electron. Dev. Lett.
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      • T.F. Kuech , M.A. Tischler , P.J. Wang , G. Scilla , R. Potemski , F. Cardone . Controlled carbon doping of GaAs by metalorganic vapor phase epitaxy. Appl. Phys. Lett.
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