© The Institution of Electrical Engineers
The design, fabrication and characterisation of 1024-element matrix addressable vertical cavity surface emitting laser (VCSEL) arrays are described. A strained InGaAs quantum well VCSEL structure was grown by molecular beam epitaxy and an array of 32×32 lasers was defined using a proton implantation process. A matrix addressing architecture was employed, which enables the individual addressing of each of the 1024 lasers using only 64 electrical contacts. All the lasers in the array, measured after the laser definition step, were operating with fairly homogeneous characteristics; threshold current of 6.8 mA and output quantum differential efficiency of about 8%.
References
-
-
1)
-
R.S. Geels ,
L.A. Coldren
.
Submilliamp threshold vertical-cavity laser diodes.
Appl. Phys. Lett.
,
1605 -
1606
-
2)
-
Y.H. Lee ,
J.L. Jewell ,
A. Scherer ,
S.L. Mccall ,
J.P. Harbison ,
L.T. Florez
.
Room temperature continuous-wave vertical-cavity single-quantum-well microlaser diodes.
Electron. Lett.
,
1377 -
1378
-
3)
-
A. Von Lehmen ,
C. Chang-Hasnain ,
J.R. Wullert ,
L. Carrion ,
L.T. Florez ,
J.P. Harbison
.
Independently addressable VCSE laser array.
-
4)
-
S. Uchiyama ,
K. Iga
.
Two-dimensional array of GaInAsP/InP surface emitting lasers.
Electron. Lett.
,
162 -
164
-
5)
-
M. Orenstein ,
A.C. von Lehmen ,
C. Chang-Hasnain ,
N.G. Stoffel ,
J.P. Harbison ,
L.T. Florez ,
E. Clausen ,
J.E. Jewell
.
Vertical-cavity surface-emitting InGaAs/GaAs lasers with planar lateral definition.
Appl. Phys. Lett.
,
2384 -
2386
-
6)
-
A. Scherer ,
J.L. Jewell ,
Y.H. Lee ,
J.P. Harbison ,
L.T. Florez
.
Fabrication of microlasers and microresonator optical switches.
Appl. Phys. Lett.
,
2724 -
2726
-
7)
-
H. Soda ,
K. Iga ,
C. Kitahara ,
Y. Suematsu
.
GaInAsP/InP surface emitting injection lasers.
Jpn. J. Appl. Phys.
,
2329 -
2330
-
8)
-
E.G. Paek ,
J.R. Wullert ,
M. Jain ,
A. von Lehmen ,
A. Scherer ,
J. Harbison ,
L.T. Florez ,
H.J. Yoo ,
R. Martin ,
J.L. Jewell ,
Y.H. Lee
.
Compact and ultrafast holographic memory using a surface-emitting microlaser diode array.
Opt. Lett.
,
341 -
343
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19910276
Related content
content/journals/10.1049/el_19910276
pub_keyword,iet_inspecKeyword,pub_concept
6
6