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Investigation of indium doping and incorporation in AlGaAs/GaAs double-barrier resonant tunnelling structures

Investigation of indium doping and incorporation in AlGaAs/GaAs double-barrier resonant tunnelling structures

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© The Institution of Electrical Engineers
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In doping and incorporation in the barrier layers of AlGaAs/GaAs double-barrier resonant tunnelling structures (DBRTSs) have been studied. It was found that the peak-to-valley current ratio (PVCR) can be improved by the proper amount of In doping. This is attributed to the improvement in the quality of the AlGaAs barrier layers due to the high surface migration rate of In atoms that reduces group III vacancies. Also pseudomorphic InxAl0.5Ga0.5)1−xAs/GaAs (x = 0.12) strained-layer DBRTSs have been fabricated by incorporating a sufficient amount of In into the AlGaAs barrier layers. PVCRs as high as 27.5 at 77 K have been obtained. This is the first realisation of such DBRTSs with lattice-mismatched quaternary barrier layers.

Inspec keywords: semiconductor junctions; tunnel diodes; resonant tunnelling devices; aluminium compounds; III-V semiconductors; gallium arsenide; indium; semiconductor doping; indium compounds

Other keywords: AlGaAs-GaAs; Inx(Al0.5Ga0.5)1-xAs-GaAs; high surface migration rate; 77 K; negative differential resistance regions; lattice-mismatched quaternary barrier layers; NDR; double-barrier resonant tunnelling structures; DBRTSs; semiconductors; peak-to-valley current ratio; PVCR

Subjects: Junction and barrier diodes; Semiconductor junctions; Semiconductor doping; II-VI and III-V semiconductors

References

    1. 1)
      • K.H. Chang , C.P. Lee , J.S. Wu , D.G. Liu , D.C. Liou . Influence of indium doping on AlGaAs layers grown by molecular beam epitaxy. Appl. Phys. Lett. , 1640 - 1642
    2. 2)
      • I.J. Fritz , P.L. Gourley , L.R. Dawson . Critical layer thickness in In0.2Ga0.8As/GaAs single strained quantum well structures. Appl. Phys. Lett. , 1004 - 1006
    3. 3)
      • V.J. Goldman , D.C. Tsui , J.E. Cunningham . Evidence for LO-phonon-emission-assisted tunnelling in double-barrier heterostructures. Phys. Rev. B , 7635 - 7637
    4. 4)
      • H.C. Casey , M.B. Panish . (1978) , Heterostructure lasers, Part B: materials and operating characteristics.
    5. 5)
      • J.S. Wu , C.Y. Chang , C.P. Lee , K.H. Chang , D.G. Liu , D.C. Liou . Resonant tunnelling of electrons from quantized levels in the accumulation layer of double-barrier heterostructures. Appl. Phys. Lett. , 2311 - 2312
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19910271
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