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Programmable memory cell using quantum confined Stark effect in multi-quantum well heterojunction bipolar transistor

Programmable memory cell using quantum confined Stark effect in multi-quantum well heterojunction bipolar transistor

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© The Institution of Electrical Engineers
Published

A three terminal bistable programmable memory cell which can be read either optically or electrically is proposed and demonstrated. The device is based on using Stark effect of the excitonic transitions in a multiquantum well base region of a heterojunction bipolar transistor. The single device can be flipped (and held) from low transmittance (high voltage) to high transmittance (low voltage) state and vice versa by a varying base current signal.

Inspec keywords: semiconductor storage; heterojunction bipolar transistors; semiconductor quantum wells; Stark effect

Other keywords: quantum confined Stark effect; bistable programmable memory cell; three terminal; optical readout; electrical readout; multi-quantum well; heterojunction bipolar transistor; MQW base region; HBT; flip flop element

Subjects: Memory circuits; Bipolar transistors; Semiconductor storage

References

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