MOCVD grown carbon-doped graded-base AlGaAs/GaAs HBTs
MOCVD grown carbon-doped graded-base AlGaAs/GaAs HBTs
- Author(s): H. Ito
- DOI: 10.1049/el:19901278
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- Author(s): H. Ito 1
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View affiliations
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Affiliations:
1: NTT LSI Laboratories, Atsugi, Japan
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Affiliations:
1: NTT LSI Laboratories, Atsugi, Japan
- Source:
Volume 26, Issue 23,
8 November 1990,
p.
1977 – 1978
DOI: 10.1049/el:19901278 , Print ISSN 0013-5194, Online ISSN 1350-911X
AlGaAs/GaAs HBTs with compositionally-graded carbondoped base layers were grown by conventional low-pressure MOCVD for the first time. A high current gain of 100 obtained for a very high base doping of 8 × 1019cm−3 indicates the high crystal quality of the AlGaAs graded base layer.
Inspec keywords: heterojunction bipolar transistors; semiconductor epitaxial layers; chemical vapour deposition; gallium arsenide; vapour phase epitaxial growth; III-V semiconductors; semiconductor doping; aluminium compounds; carbon; semiconductor growth
Other keywords:
Subjects: Epitaxial growth; II-VI and III-V semiconductors; Semiconductor doping; Bipolar transistors
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