Phase-locked two-dimensional arrays of implant isolated vertical cavity surface emitting lasers

Access Full Text

Phase-locked two-dimensional arrays of implant isolated vertical cavity surface emitting lasers

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

The fabrication and characterisation of two-dimensional phase-locked arrays of vertical cavity surface emitting lasers is reported. The three two-dimensional array structures characterised were a 2 × 3 periodic array of 10μm2 lasers, a hexagonal array and a centred hexagonal array of 5 μm hexagonal lasers. All arrays were fabricated using the same technique which was a combination of mesa etching and oxygen implantation isolation.

Inspec keywords: aluminium compounds; ion implantation; distributed Bragg reflector lasers; sputter etching; gallium arsenide; semiconductor laser arrays; III-V semiconductors

Other keywords: implant isolated vertical cavity surface emitting lasers; Al0.5Ga0.5As; hexagonal array; centred hexagonal array; oxygen implantation isolation; In0.2Ga0.8As; hexagonal lasers; two-dimensional phase-locked arrays; AlGaAs-GaAs; mesa etching

Subjects: Surface treatment and degradation in semiconductor technology; Lasing action in semiconductors; Surface treatment (semiconductor technology); Design of specific laser systems; Doping and implantation of impurities; Semiconductor doping; Semiconductor lasers

References

    1. 1)
      • G.A. Evans , N.W. Carlson , J.M. Hammer , M. Lurie , J.K. Butler , S.L. Palfrey , R. Amantea , L.A. Carr , F.Z. Hawrylo , E.A. Janes , C.J. Kaiser , J.B. Kirk , W.F. Reichert , S.R. Chinn , J.R. Shearly , P.S. Zory . Coherent, monolithic two-dimensional (10 × 10) laser arrays using grating surface emission. Appl. Phys. Lett. , 2123 - 2125
    2. 2)
      • H.J. Yoo , J.R. Hayes , E.G. Paek , A. Scherer , Y.S. Kwon . Array mode analysis of two dimensional phase locked array of vertical cavity surface emitting lasers. IEEE J. Quantum Electron.
    3. 3)
      • J. Buus , P.J. Williams , I. Goodridge , D.J. Robbins , J. Urquhart , A.P. Webb , T. Reid , R. Nicklin , P. Charles , D.C.J. Reid , A.C. Carter . Surface-emitting two-dimensional coherent semi-conductor laser array. Appl. Phys. Lett. , 331 - 333
    4. 4)
      • H.J. Yoo , A. Scherer , J.P. Harbison , L.T. Florez , B.P. van der Gaag , E.G. Paek , J.R. Hayes , A. von Lehmen , E. Kapon , Y.S. Kwon . Fabrication of two-dimensional phase locked array of vertical cavity surface emitting lasers. Appl. Phys. Lett. , 1198 - 1200
    5. 5)
      • J.L. Jewell , A. Scherer , S.L. McCall , Y.H. Lee , S.J. Walker , J.P. Harbison , L.T. Florez . Low threshold electrically-pumped vertical-cavity surface-emitting micro-lasers. Electron. Lett. , 1123 - 1124
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19901258
Loading

Related content

content/journals/10.1049/el_19901258
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading