Your browser does not support JavaScript!
http://iet.metastore.ingenta.com
1887

Carrier lifetime increase in silicon by gettering with a MeV-implanted carbon-rich layer

Carrier lifetime increase in silicon by gettering with a MeV-implanted carbon-rich layer

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

The gettering efficiency of silicon implanted with carbon ions in the energy range 0.33–10 MeV was tested by carrier lifetime measurements. After an intentional contamination of the sample back side with gold as a lifetime killer, we found values for the generation lifetime of the minority carriers on the front side higher by 1–2 orders of magnitude as compared with unimplanted silicon.

References

    1. 1)
      • W. Skorupa , R. Grötzschel , H. Bartsch . Recent advances of ion beam synthesis for SOI-structures. Phys. Stat. Sol. A. , 661 - 666
    2. 2)
      • W. Skorupa , P. Knothe , R. Grötzschel . Heavy metal gettering in buried nitride silicon on insulator-structures. Electron. Lett. , 464 - 466
    3. 3)
      • H. Wong , N.W. Cheung , P.K. Chu , J. Liu , J.W. Mayer . Proximity gettering with mega-electron-volt carbon and oxygen implantations. Appl. Phys. Lett. , 1023 - 1025
    4. 4)
      • N.W. Cheung , C.L. Liang , B.K. Liew , R.H. Mutikainen , H. Wong . Buried dopant and defect layers for device structures with high energy ion implantation. Nucl. Instr. Meth. , 941 - 950
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19901222
Loading

Related content

content/journals/10.1049/el_19901222
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address