Carrier lifetime increase in silicon by gettering with a MeV-implanted carbon-rich layer

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Carrier lifetime increase in silicon by gettering with a MeV-implanted carbon-rich layer

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© The Institution of Electrical Engineers
Published

The gettering efficiency of silicon implanted with carbon ions in the energy range 0.33–10 MeV was tested by carrier lifetime measurements. After an intentional contamination of the sample back side with gold as a lifetime killer, we found values for the generation lifetime of the minority carriers on the front side higher by 1–2 orders of magnitude as compared with unimplanted silicon.

Inspec keywords: minority carriers; silicon; getters; ion implantation; elemental semiconductors; carbon; carrier lifetime

Other keywords: sample back side; gettering efficiency; Si:C; semiconductors; MeV-implanted carbon-rich layer; 0.33 to 10 MeV; carrier lifetime measurements; minority carriers; Au lifetime killer; intentional contamination

Subjects: Charge carriers: generation, recombination, lifetime, and trapping (semiconductors/insulators); Doping and implantation of impurities; Semiconductor doping; Elemental semiconductors

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