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Modelling DC characteristics of GaAs MESFET devices using a simple and accurate analytic tool

Modelling DC characteristics of GaAs MESFET devices using a simple and accurate analytic tool

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© The Institution of Electrical Engineers
Published

A simple equation that relates the drain current to the gate and source voltages of GaAs MESFET devices is presented. The proposed equation covers the entire Ids/Vds characteristics with no limitations. The parameters of the equation are evaluated easily using simple analytic tools without optimisation. Results show that the proposed formula gives accurate fitting results compared with the most popular used formula (the Curtice equation). Typical CPU times for evaluating the modelling parameters for a NEC71000 device using the two models are in the ratio of 1:50.

Inspec keywords: Schottky gate field effect transistors; III-V semiconductors; electronic engineering computing; gallium arsenide; semiconductor device models

Other keywords: DC characteristics; gate voltage; Curtice equation; GaAs; NEC71000 device; CPU times; MESFET devices; I/V characteristics; source voltages; analytic tool; optimisation; drain current; modelling parameters

Subjects: Semiconductor device modelling, equivalent circuits, design and testing; Electronic engineering computing; Other field effect devices

References

    1. 1)
      • El-Rabaie, S., Ibrahim, S.A.: `A comparative study for compact DC models of GaAs MESFET devices for large signal computer calculations', NRSC'91, submitted for publication in.
    2. 2)
      • El-Rabaie, S.: `Microwave GaAs FET circuit design', July 1988, PhD thesis, The Queens University of Belfast.
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