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First-order, switched-capacitor, low-pass filter implemented with GaAs insulated-gate FET switches

First-order, switched-capacitor, low-pass filter implemented with GaAs insulated-gate FET switches

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© The Institution of Electrical Engineers
Published

The application of the GaAs insulated-gate FET in switched-capacitor circuits is demonstrated. This is achieved by constructing a first-order, switched-capacitor, low-pass filter from monolithic GaAs IGFET switches and discrete capacitors. Hysteresis in the FET characteristic is shown to be unimportant. FET switching is shown to be independent of the absolute level of the switching signal.

Inspec keywords: active filters; gallium arsenide; switched capacitor filters; insulated gate field effect transistors; III-V semiconductors; low-pass filters

Other keywords: switching signal; IGFET; low-pass filter; GaAs; switched-capacitor circuits; discrete capacitors; first-order filters; insulated-gate FET switches

Subjects: Active filters and other active networks

References

    1. 1)
      • Haigh, D.G., Toumazou, C., Harrold, S.J., Sewell, J.I.: `Design and optimisation of a GaAs switched capacitor filter', IEE Saraga Colloquium on ‘Electronic Filters’, 1988, .
    2. 2)
      • W.S. Lee , J.G. Swanson . Switching behaviour of AI2O3 n-GaAs MISFETs. Electron. Lett. , 1049 - 1051
    3. 3)
      • S.J. Harrold . Switch-driver circuit suitable for high-order switched-capacitor filters implemented in GaAs. Electron. Lett. , 982 - 984
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