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Fabrication of sub-50 nm poly-Si/SiO2/Si narrow wires using electron beam lithography and CF4/O2 reactive ion etching

Fabrication of sub-50 nm poly-Si/SiO2/Si narrow wires using electron beam lithography and CF4/O2 reactive ion etching

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© The Institution of Electrical Engineers
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Poly-Si/SiO2/Si narrow wires with widths of less than 50 nm were fabricated using electron beam lithography and CF4 + 10% O2 reactive ion etching techniques. The extraction of optimum processing parameters for obtaining wires with nearly perpendicular sidewalls is reported.

Inspec keywords: elemental semiconductors; silicon; sputter etching; semiconductor quantum wells; electron beam lithography

Other keywords: tetrafluoromethane; fabrication; width; polysilicon; reactive ion etching; polycrystaline Si-SiO2-Si wires; perpendicular sidewalls; electron beam lithography; narrow wires; processing parameters; 50 nm

Subjects: Lithography (semiconductor technology); Surface treatment (semiconductor technology); Elemental semiconductors; Semiconductor junctions

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