Integration of detectors with GaInAsP/InP carrier depletion optical switches

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Integration of detectors with GaInAsP/InP carrier depletion optical switches

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© The Institution of Electrical Engineers
Published

An optical switch made of carrier depletion directional couplers based on GaInAsP/InP double-heterostructure waveguides with integrated detectors was realised. The device was fabricated using a two step Cl-VPE epitaxy and shows good performances both in terms of switching (phase modulation efficiency ñ 12°/V/mm) and detecting properties (detector leakage current ñ 1 nA at −5 V).

Inspec keywords: photodetectors; semiconductor growth; optical switches; indium compounds; gallium arsenide; gallium compounds; optical waveguides; integrated optics; optical information processing; vapour phase epitaxial growth; optical couplers

Other keywords: GaInAsP-InP double heterostructure waveguide; carrier depletion directional couplers; phase modulation efficiency; optical signal processing; two step Cl-VPE epitaxy; monolithically integrated detectors; chloride vapour phase epitaxy; detector leakage current; carrier depletion optical switches; optical switch

Subjects: Epitaxial growth; Optical waveguides; Detection of radiation (bolometers, photoelectric cells, i.r. and submillimetre waves detection); Integrated optics; Chemical vapour deposition; Integrated optics; Optical waveguides and couplers; Photodetectors

References

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      • M. Erman , P. Riglet , P. Jarry , B.G. Martin , M. Renaud , J.-F. Vinchant , J.A. Cavailles . Optical circuits and integrated detectors. IEE Proc. J, Special Issue on Semiconductors Optoelectronics
    2. 2)
      • Cavailles, J.A., Erman, M., Jarry, P., Auger, J.-M., Goutelle, A., Angenent, J.H.: `Cascaded carrier depletion optical switches based on InP/GaInAsP waveguides', TuB2.2, Proc. ECOC'90, 16th–20th September 1990, Amsterdam.
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      • Riglet, P., Erman, M., Martin, B.G., Jarry, P., Renaud, M.: `High performance PIN photodiodes on waveguide for coherent communications', TuG4.2, Proc. ECOC'90, 16th–20th September 1990, Amsterdam.
    4. 4)
      • Angenent, J.H., Erman, M., Thus, P.J.A., Renaud, M., Graver, C., Auger, J.M., Gamonal, R., Cavailles, J.A.: `Optical switches on InP substrates using carrier depletion with driving voltages as low as 4.5 Volts', Proc. ECOC'89, 10th–14th September 1989, Gothenburg.
    5. 5)
      • K.-Y. Liou , U. Koren , S. Chandrasekhar , T.L. Koch , A. Shahar , C.A. Burrus , R.P. Gnall . Monolithic integrated InGaAsP/InP distributed feedback laser with Y branching waveguide and a monitoring photodetector grown by metalorganic chemical vapour deposition. Appl. Phys. Lett. , 2 , 114 - 116
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