Heavily doped base GaInP/GaAs heterojunction bipolar transistor grown by chemical beam epitaxy
Heavily doped base GaInP/GaAs heterojunction bipolar transistor grown by chemical beam epitaxy
- Author(s): F. Alexandre ; J.L. Benchimol ; J. Dangla ; C. Dubon-Chevallier ; V. Amarger
- DOI: 10.1049/el:19901126
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- Author(s): F. Alexandre 1 ; J.L. Benchimol 1 ; J. Dangla 1 ; C. Dubon-Chevallier 1 ; V. Amarger 1
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View affiliations
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Affiliations:
1: Laboratorie de Bagneux, Centre National d'Etude des Télécommunications, Bagneux, France
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Affiliations:
1: Laboratorie de Bagneux, Centre National d'Etude des Télécommunications, Bagneux, France
- Source:
Volume 26, Issue 21,
11 October 1990,
p.
1753 – 1755
DOI: 10.1049/el:19901126 , Print ISSN 0013-5194, Online ISSN 1350-911X
The first demonstration of a GaInP/GaAs heterojunction bipolar transistor grown by chemical beam epitaxy is reported. A common-emitter current gain of 30 at a current density of 110 A/cm2 is obtained for a beryllium base doping as high as 8 × 1019 cm−3. The base sheet resistance of 140 Ω/□ is among the lowest reported vulues.
Inspec keywords: III-V semiconductors; heavily doped semiconductors; semiconductor growth; chemical beam epitaxial growth; indium compounds; gallium compounds; gallium arsenide; heterojunction bipolar transistors
Other keywords:
Subjects: Bipolar transistors; Semiconductor doping; Epitaxial growth
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