© The Institution of Electrical Engineers
The first demonstration of a GaInP/GaAs heterojunction bipolar transistor grown by chemical beam epitaxy is reported. A common-emitter current gain of 30 at a current density of 110 A/cm2 is obtained for a beryllium base doping as high as 8 × 1019 cm−3. The base sheet resistance of 140 Ω/□ is among the lowest reported vulues.
References
-
-
1)
-
Benchimol, J.L., le Roux, G., Thibierge, H., Daguet, C., Alexandre, F., Brillouet, F.: `Incorporation of group III and group V elements in chemical beam epitaxy of GaInAsP alloys', Proc. 5th Int. Conf. MOVPE and Workshop on MOMBE and Rel. Techn., 1990, p. 322–323.
-
2)
-
M.J. Mondry ,
H. Kroemer
.
Heterojunction bipolar transistor using a (Ga, In)P emitter on a GaAs base, grown by molecular beam epitaxy.
IEEE Electron Dev. Lett.
,
175 -
177
-
3)
-
J. Dangla ,
C. Dubon-Chevallier ,
M. Filoche ,
R. Azoulay
.
Electrical characterisation of the p-type dopant diffusion of highly doped AlGaAs/GaAs heterojunction bipolar transistors grown by MOCVD.
Electron. Lett.
,
1061 -
1063
-
4)
-
W.T. Tsang
.
Chemical beam epitaxy.
VLSI Electronics: Microstructure Science
,
255 -
353
-
5)
-
D. Biswas ,
N. Debar ,
P. Bhattacharya ,
M. Razeghi ,
M. Defour ,
F. Omnes
.
Conduction and valence band offsets in GaAs/GaInP single quantum wellsgrown by metalorganic chemical vapor deposition.
Appl. Phys. Lett.
,
833 -
835
-
6)
-
J.L. Lievin ,
C. Dubon-Chevallier ,
F. Alexandre ,
G. le Roux ,
J. Dangla ,
D. Ankri
.
GaAlAs/GaBeAs heterojunction bipolar transistor grown by molecular beam epitaxy.
IEEE Electron Dev. Lett.
,
129 -
131
-
7)
-
J.L. Benchimol ,
F. Alexandre ,
Y. Gao ,
F. Alaoui
.
Growth parameter dependence of background doping level in GaAs, InGaAs and AlGaAs grown by metalorganic molecular beam epitaxy.
J. Cryst. Growth
,
150 -
153
-
8)
-
F. Ren ,
C.R. Abernathy ,
S.J. Pearton ,
T.R. Fullowan ,
J. Lothian ,
A.S. Jordan
.
GaAs–AlGaAs HBT with carbon doped base layer grown by MOMBE.
Electron. Lett.
,
724 -
725
-
9)
-
T. Kobayashi ,
K. Taira ,
F. Nakamura ,
H. Kawai
.
Band lineup for a GaInP/GaAs heterojunction measured by a high npn heterojunction bipolar transistor grown by metalorganic chemical vapor deposition.
J. Appl. Phys.
,
4898 -
4902
-
10)
-
M. Razeghi ,
F. Omnes ,
M. Defour ,
P. Maurel ,
J. Hu ,
E. Wolk ,
D. Pavlidis
.
High performance GaAs/GaInP heterostructure bipolar transistor grown by low-pressure metal-organic chemical vapour deposition.
Semicond. Sci. Technol.
,
278 -
280
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