Luminescent Er doped microparticles in a semiconductor matrix

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Luminescent Er doped microparticles in a semiconductor matrix

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© The Institution of Electrical Engineers
Published

The rare earth element erbium was implanted into various semiconductors. Photoluminescence of the erbium implanted layer is studied. The peak wavelength is centred at 1.54 =m wavelength and has about the same maximum intensity whatever the host material is. Results of cathodoluminescence from a scanning electron microscope revealed that the 1.54 =m emission is not uniformly dispersed at the surface. The 1.54 =m emission could be from microparticles of Er-rich compounds.

Inspec keywords: erbium; semiconductor doping; ion implantation; cathodoluminescence; photoluminescence; scanning electron microscope examination of materials

Other keywords: semiconductor matrix; peak wavelength; scanning electron microscope; cathodoluminescence; microparticles; luminescence; 1.54 micron

Subjects: Photoluminescence in tetrahedrally bonded nonmetals; Semiconductor doping; Electron microscopy determinations of structures; Luminescent materials; Cathodoluminescence, ionoluminescence (condensed matter)

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