Luminescent Er doped microparticles in a semiconductor matrix
The rare earth element erbium was implanted into various semiconductors. Photoluminescence of the erbium implanted layer is studied. The peak wavelength is centred at 1.54 =m wavelength and has about the same maximum intensity whatever the host material is. Results of cathodoluminescence from a scanning electron microscope revealed that the 1.54 =m emission is not uniformly dispersed at the surface. The 1.54 =m emission could be from microparticles of Er-rich compounds.