Your browser does not support JavaScript!
http://iet.metastore.ingenta.com
1887

Luminescent Er doped microparticles in a semiconductor matrix

Luminescent Er doped microparticles in a semiconductor matrix

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Add to cart
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)
Add to cart

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

© The Institution of Electrical Engineers
Published

The rare earth element erbium was implanted into various semiconductors. Photoluminescence of the erbium implanted layer is studied. The peak wavelength is centred at 1.54 =m wavelength and has about the same maximum intensity whatever the host material is. Results of cathodoluminescence from a scanning electron microscope revealed that the 1.54 =m emission is not uniformly dispersed at the surface. The 1.54 =m emission could be from microparticles of Er-rich compounds.

Inspec keywords: erbium; semiconductor doping; ion implantation; cathodoluminescence; photoluminescence; scanning electron microscope examination of materials

Other keywords: semiconductor matrix; peak wavelength; scanning electron microscope; cathodoluminescence; microparticles; luminescence; 1.54 micron

Subjects: Photoluminescence in tetrahedrally bonded nonmetals; Semiconductor doping; Electron microscopy determinations of structures; Luminescent materials; Cathodoluminescence, ionoluminescence (condensed matter)

References

    1. 1)
      • H. Ennen , J. Schneider , G. Pomrenke , A. Axmann . 1.54 =m luminescence of erbium implanted III-V semiconductors and silicon. Appl. Phys. Lett. , 943 - 945
    2. 2)
      • B.G. Yacobi . Electron-beam induced information storage in hydrogenated amorphous silicon devices. Appl. Phys. Lett. , 695 - 697
    3. 3)
      • P.S. Withney , K. Uwai , H. Nakagome , K. Takahei . Erbium doped GaAs light emitting diodes emitting erbium f shell luminescence at l.54 =m. Electron. Lett. , 740 - 741
    4. 4)
      • D. Moutonnet , H. L'Haridon , P.N. Favennec , M. Salvi , F. Arnaud D'Avitaya , J. Chroboczek . 1.54 =n photoluminescence of erbium-implanted silicon. Mat. Sci. Eng. , 75 - 77
    5. 5)
      • G.S. Pomrenke , H. Ennen , W. Haydl . Photoluminescence optimization and characteristics of the rare-earth element erbium implanted in GaAs, InP and GaP. J. Appl. Phys. , 1686 - 1688
    6. 6)
      • H. Nakagome , K. Takahei , Y. Homma . Liquid phase epitaxy and characterization of rare earth ion (Yb, Er) doped InP. J. Crystal Growth , 345 - 356
    7. 7)
      • C. Rochaix , A. Rolland , P.N. Favennec , B. Lambert , A. le Corre , H. L'Haridon , M. Salvi . Erbium implanted in III-V materials. Jap. J. Appl. Phys. , L2348 - L2350
    8. 8)
      • P.N. Favennec , H. L'haridon , A. le Corre , M. Salvi , M. Gauneau . Nondiffusion and 1.54 =m luminescence of erbium implanted in InP. Electron. Lett. , 684 - 686
    9. 9)
      • P.N. Favennec , H. L'haridon , D. Moutonnet , M. Salvi , M. Gauneau . Optical activation of Er3+ implanted in silicon by oxygen impurities. Jap. J. Appl. Phys. , L2524 - L2526
    10. 10)
      • M. Kechouane , H. L'haridon , M. Salvi , P.N. Favennec , D. Moutonnet , M. Gauneau , J.P. Mercier . Growth of Al:Er:O alloys on silicon. Electron. Lett. , 14 , 1067 - 1069
    11. 11)
      • A.C. Papadopoulo , F. Alexandre , J.F. Bresse . Characterisation of oval defects in molecular beam epitaxy Ga0.7Al0.3As layers by spatially resolved cathodoluminescence. Appl. Phys. Lett.
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19900999
Loading

Related content

content/journals/10.1049/el_19900999
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
Print this page
This is a required field
Please enter a valid email address