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Luminescent Er doped microparticles in a semiconductor matrix

Luminescent Er doped microparticles in a semiconductor matrix

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The rare earth element erbium was implanted into various semiconductors. Photoluminescence of the erbium implanted layer is studied. The peak wavelength is centred at 1.54 =m wavelength and has about the same maximum intensity whatever the host material is. Results of cathodoluminescence from a scanning electron microscope revealed that the 1.54 =m emission is not uniformly dispersed at the surface. The 1.54 =m emission could be from microparticles of Er-rich compounds.

References

    1. 1)
      • H. Ennen , J. Schneider , G. Pomrenke , A. Axmann . 1.54 =m luminescence of erbium implanted III-V semiconductors and silicon. Appl. Phys. Lett. , 943 - 945
    2. 2)
      • G.S. Pomrenke , H. Ennen , W. Haydl . Photoluminescence optimization and characteristics of the rare-earth element erbium implanted in GaAs, InP and GaP. J. Appl. Phys. , 1686 - 1688
    3. 3)
      • P.N. Favennec , H. L'haridon , A. le Corre , M. Salvi , M. Gauneau . Nondiffusion and 1.54 =m luminescence of erbium implanted in InP. Electron. Lett. , 684 - 686
    4. 4)
      • C. Rochaix , A. Rolland , P.N. Favennec , B. Lambert , A. le Corre , H. L'Haridon , M. Salvi . Erbium implanted in III-V materials. Jap. J. Appl. Phys. , L2348 - L2350
    5. 5)
      • P.S. Withney , K. Uwai , H. Nakagome , K. Takahei . Erbium doped GaAs light emitting diodes emitting erbium f shell luminescence at l.54 =m. Electron. Lett. , 740 - 741
    6. 6)
      • D. Moutonnet , H. L'Haridon , P.N. Favennec , M. Salvi , F. Arnaud D'Avitaya , J. Chroboczek . 1.54 =n photoluminescence of erbium-implanted silicon. Mat. Sci. Eng. , 75 - 77
    7. 7)
      • B.G. Yacobi . Electron-beam induced information storage in hydrogenated amorphous silicon devices. Appl. Phys. Lett. , 695 - 697
    8. 8)
      • A.C. Papadopoulo , F. Alexandre , J.F. Bresse . Characterisation of oval defects in molecular beam epitaxy Ga0.7Al0.3As layers by spatially resolved cathodoluminescence. Appl. Phys. Lett.
    9. 9)
      • H. Nakagome , K. Takahei , Y. Homma . Liquid phase epitaxy and characterization of rare earth ion (Yb, Er) doped InP. J. Crystal Growth , 345 - 356
    10. 10)
      • M. Kechouane , H. L'haridon , M. Salvi , P.N. Favennec , D. Moutonnet , M. Gauneau , J.P. Mercier . Growth of Al:Er:O alloys on silicon. Electron. Lett. , 14 , 1067 - 1069
    11. 11)
      • P.N. Favennec , H. L'haridon , D. Moutonnet , M. Salvi , M. Gauneau . Optical activation of Er3+ implanted in silicon by oxygen impurities. Jap. J. Appl. Phys. , L2524 - L2526
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