High-efficiency GaAs microwave power MESFETs with an n+nn doping formed by buried-shallow-implant (BSI)

High-efficiency GaAs microwave power MESFETs with an n+nn doping formed by buried-shallow-implant (BSI)

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GaAs power FETs have been fabricated with an n+nn doping profile formed by a new buried-shallow-implant (BSI) process. This technique, which buries a thin precisely controlled active layer below the less critical capping layers, has produced high-efficiency devices with gate-drain breakdown voltages 30% higher than similarly processed all-implanted controls. Power-added efficiencies of 42% at 12 GHz, 46% at 10 GHz, and 52% at 8.5 GHz were measured from an initial test sample at an output power level of 200 mW. MMIC feedback amplifiers fabricated on the same wafer have also shown high-efficiency performance.


    1. 1)
      • J.A. Higgins . Modeling the influence of carrier profiles on MESFET characteristics. IEEE Trans. , 1066 - 1073
    2. 2)
      • J.M. Golio , R.J. Trew . Profile studies of ion-implanted MESFETs. IEEE Trans. , 1066 - 1071
    3. 3)
      • D. Pavlidis , J.-L. Cazaux , J. Graffeuil . The influence of ion-implanted profiles on the performance of GaAs MESFETs and MMIC amplifiers. IEEE Trans. , 642 - 652
    4. 4)
      • Tan, T.S., Stoneham, E.B., Patterson, G., Collins, D.M.: `GaAs FET channel structure investigation using MBE', GaAs IC Symposium Digest, 1983, p. 38–41.
    5. 5)
      • P. Saunier , H.D. Shih . High-performance K-band GaAs power field-effect transistors prepared by molecular beam epitaxy. Appl. Phys. Lett. , 966 - 968
    6. 6)
      • H.M. Macksey . Optimization of the N+ ledge channel structure for GaAs power FETs. IEEE Trans. , 1818 - 1823
    7. 7)
      • G.C. Taylor , M. Eron , D. Bechtle , S.G. Liu , R.L. Camisa . High-efficiency 35-GHz GaAs MESFETs. IEEE Trans. , 1259 - 1261
    8. 8)
      • Liu, S.G., Capewell, D.R.: `Buried-shallow-implant (BSI) process for high-efficiency GaAs microwave power MESFETs', 1988 Material Research Society Symposium Proceedings, 1989, 144, p. 689–694.
    9. 9)
      • S.G. Liu , E.C. Douglas , C.P. Wu , C.W. Magee , S.Y. Narayan , S.T. Jolly , F. Kolondra , S. Jain . Ion implantation of sulfur and silicon in GaAs. RCA Review , 227 - 262
    10. 10)
      • Gibbons, J.F., Reynolds, S., Gronet, C., Vook, D., King, C., Opyd, W., Wilson, S., Nauka, C., Reid, G., Hull, R.: `Limited reaction processing: silicon and III-V materials', 1987 Material Research Society Symposium Proceedings, 1987, 92, p. 281–294.

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