access icon free Erratum: Monolithic integration of an InGaAs/GaAs/AlGaAs strained layer SQW LED and GaAs MESFET using epitaxial lift-off

There is no abstract available for this article.

Inspec keywords: aluminium compounds; Schottky gate field effect transistors; III-V semiconductors; integrated optoelectronics; indium compounds; light emitting diodes; semiconductor technology; integrated circuit technology; gallium arsenide

Other keywords: surface emitting LED; monolithic integration; GaAs MESFET driver; epitaxial lift-off technique; external quantum efficiency; 1.7 percent; strained layer SQW LED; OEIC; InGaAs-GaAs-AlGaAs

Subjects: Light emitting diodes; II-VI and III-V semiconductors; Semiconductor technology; Integrated optoelectronics

http://iet.metastore.ingenta.com/content/journals/10.1049/el_19900852
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This article contains an Erratum to the following content:
Monolithic integration of an InGaAs/GaAs/AlGaAs strained layer SQW LED and GaAs MESFET using epitaxial lift-off