RT Journal Article
A1 I. Pollentier
A1 L. Buydens
A1 A. Ackaert
A1 P. Demeester
A1 P. van Daele
A1 F. Depestel
A1 D. Lootens
A1 R. Baets

PB iet
T1 Erratum: Monolithic integration of an InGaAs/GaAs/AlGaAs strained layer SQW LED and GaAs MESFET using epitaxial lift-off
JN Electronics Letters
VO 26
IS 16
SP 1324
OP 1324
AB
K1 1.7 percent
K1 surface emitting LED
K1 OEIC
K1 strained layer SQW LED
K1 epitaxial lift-off technique
K1 external quantum efficiency
K1 InGaAs-GaAs-AlGaAs
K1 GaAs MESFET driver
K1 monolithic integration
DO https://doi.org/10.1049/el:19900852
UL https://digital-library.theiet.org/;jsessionid=1mv8t4s3j4gwf.x-iet-live-01content/journals/10.1049/el_19900852
LA English
SN 0013-5194
YR 1990
OL EN