@ARTICLE{ iet:/content/journals/10.1049/el_19900852, author = {I. Pollentier}, author = {L. Buydens}, author = {A. Ackaert}, author = {P. Demeester}, author = {P. van Daele}, author = {F. Depestel}, author = {D. Lootens}, author = {R. Baets}, keywords = {1.7 percent;surface emitting LED;OEIC;strained layer SQW LED;epitaxial lift-off technique;external quantum efficiency;InGaAs-GaAs-AlGaAs;GaAs MESFET driver;monolithic integration;}, ISSN = {0013-5194}, language = {English}, title = {Erratum: Monolithic integration of an InGaAs/GaAs/AlGaAs strained layer SQW LED and GaAs MESFET using epitaxial lift-off}, journal = {Electronics Letters}, issue = {16}, volume = {26}, year = {1990}, month = {August}, pages = {1324-1324(0)}, publisher ={Institution of Engineering and Technology}, copyright = {© The Institution of Electrical Engineers}, url = {https://digital-library.theiet.org/;jsessionid=8c1h8cog3knb3.x-iet-live-01content/journals/10.1049/el_19900852} }