Role of satellite valleys in ionisation rate enhancement in multiple quantum well avalanche photodiodes

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Role of satellite valleys in ionisation rate enhancement in multiple quantum well avalanche photodiodes

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The enhancement of the electron ionisation rate in multiple quantum well avalanche photodiodes is determined by the band offsets in the satellite valleys rather than the Γ valley as previously assumed for semiconductors where the threshold field for the Gunn effect is less than that for impact ionisation. Monte Carlo calculations in a model GaAs/Al0.45Ga0.55As heterostructure show no enhancement caused by the band offsets.

Inspec keywords: gallium arsenide; semiconductor quantum wells; avalanche photodiodes; Monte Carlo methods; III-V semiconductors; aluminium compounds

Other keywords: Gunn effect threshold field; Monte Carlo calculations; ionisation rate enhancement; satellite valleys role; GaAs-Al0.45Ga0.55As; multiple quantum well avalanche photodiodes; APD; band offsets; semiconductors; impact ionisation threshold field; electron ionisation rate

Subjects: II-VI and III-V semiconductors; Photoelectric devices; Semiconductor junctions; Monte Carlo methods

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