High efficiency (1.2 mW/mA) top-surface-emitting GaAs quantum well lasers

Author(s): Y.H. Lee ; B. Tell ; K. Brown-Goebeler ; J.L. Jewell ; R.E. Leibenguth ; M.T. Asom ; G. Livescu ; L. Luther ; V.D. Mattera
DOI: 10.1049/el:19900841

For access to this article, please select a purchase option:

Buy article PDF

Buy Knowledge Pack

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership

Recommend Title Publication to library

Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

Author(s): Y.H. Lee ¹ ; B. Tell ¹ ; K. Brown-Goebeler ¹ ; J.L. Jewell ¹ ; R.E. Leibenguth ² ; M.T. Asom ² ; G. Livescu ² ; L. Luther ² ; V.D. Mattera ²
- Affiliations: 1: AT&T Bell Laboratories, Holmdel, USA
  2: STC, AT&T Bell Laboratories, Breinigsville, USA
Source: Volume 26, Issue 16, 2 August 1990, p. 1308 – 1310
DOI: 10.1049/el:19900841 , Print ISSN 0013-5194, Online ISSN 1350-911X

Highly efficient (1.2 mW/mA, >70% CW differential quantum efficiency), top-surface-emitting, vertical cavity lasers are achieved at room temperature. Buried damage layers by proton implantation are used for efficient current funnelling. The CW threshold currents are 3.5–8.0 mA, at 3.7–4.2 V bias, for 10.30 μm diameter lasers. The lasing wavelengths are 845–848 nm.

References

1. 1)
  - J.L. Jewell , Y.H. Lee , A. Scherer , S.L. Mccall , N.A. Olsson , J.P. Harbison , L.T. Florez . Surface-emitting microlasers for photonic switching and interchip connections. Opt. Engin. , 210 - 214
2. 2)
  - P.L. Gourley , T.M. Brennan , B.E. Hammons , S.W. Corzine , R.S. Geels , R.H. Yan , J.W. Scott , L.A. Coldren . High-efficiency TEMOO cw (Al, Ga)As epitaxial surface-emitting lasers and effect of half-wave periodic gain. Appl. Phys. Lett. , 1209 - 1211
3. 3)
  - K. Tai , R.J. Fisher , K.W. Wang , S.N.G. Chu , A.Y. Cho . Use of implantation isolation for fabrication of vertical cavity surface emitting laser diodes. Electron. Lett. , 1644 - 1645
4. 4)
  - Y.H. Lee , B. Tell , K. Brown-Goebeler , J.L. Jewell , J.V. Hove . Top-surface-emitting GaAs four-quantum-well lasers emitting at 0.85 μm. Electron. Lett. , 710 - 711
5. 5)
  - J.L. Jewell , A. Scherer , S.L. McCall , J.P. Harbison , L.T. Florez . Low-threshold vertical-cavity surface emitting microlasers. Electron. Lett. , 1123 - 1124
6. 6)
  - A. Ibaraki , K. Kawashima , K. Furusawa , T. Ishikawa , T. Yamaguchi , T. Niina . Buried heterostructure GaAs/GaAlAs distributed Bragg reflector surface emitting laser with very low threshold (5.2 mA) under room temperature cw conditions. Jpn. J. Appl. Phys. , L667 - L668
7. 7)
  - Y.H. Lee , J.L. Jewell , B. Tell , K.F. Brown-Goebeler , A. Scherer , J.P. Harbison , L.T. Florez . Effects of etch depth and ion implantation on surface emitting microlasers. Electron. Lett. , 225 - 227
8. 8)
  - R.S. Geels , S.W. Corzine , J.W. Scott , D.B. Young , L.A. Coldren . Low threshold planarized vertical cavity surface-emitting lasers. Photon. Tech. Lett. , 234 - 236
9. 9)
  - D. Botez , L.M. Zinkiewicz , T.J. Roth , L.J. Mawst , G. Peterson . Low-threshold-current-density vertical cavity surface emitting AlGaAs/GaAs lasers. IEEE Photon. Technol. Lett. , 205 - 208
10. 10)
  - Y.H. Lee , J.L. Jewell , A. Scherer , S.L. McCall , J.P. Harbison , L.T. Florez . Room-temperature continuous-wave vertical cavity single-quantum-wellmicrolaser diodes. Electron. Lett. , 1377 - 1378
11. 11)
  - H. Tanobe , F. Koyama , K. Iga . Spectral linewidth of AlGaAs/GaAs surface-emitting laser. Electron. Lett. , 1444 - 1446

High efficiency (1.2 mW/mA) top-surface-emitting GaAs quantum well lasers

High efficiency (1.2 mW/mA) top-surface-emitting GaAs quantum well lasers

Buy article PDF

Buy Knowledge Pack

Thank you

References

Related content