High efficiency (1.2 mW/mA) top-surface-emitting GaAs quantum well lasers
High efficiency (1.2 mW/mA) top-surface-emitting GaAs quantum well lasers
- Author(s): Y.H. Lee ; B. Tell ; K. Brown-Goebeler ; J.L. Jewell ; R.E. Leibenguth ; M.T. Asom ; G. Livescu ; L. Luther ; V.D. Mattera
- DOI: 10.1049/el:19900841
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- Author(s): Y.H. Lee 1 ; B. Tell 1 ; K. Brown-Goebeler 1 ; J.L. Jewell 1 ; R.E. Leibenguth 2 ; M.T. Asom 2 ; G. Livescu 2 ; L. Luther 2 ; V.D. Mattera 2
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View affiliations
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Affiliations:
1: AT&T Bell Laboratories, Holmdel, USA
2: STC, AT&T Bell Laboratories, Breinigsville, USA
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Affiliations:
1: AT&T Bell Laboratories, Holmdel, USA
- Source:
Volume 26, Issue 16,
2 August 1990,
p.
1308 – 1310
DOI: 10.1049/el:19900841 , Print ISSN 0013-5194, Online ISSN 1350-911X
Highly efficient (1.2 mW/mA, >70% CW differential quantum efficiency), top-surface-emitting, vertical cavity lasers are achieved at room temperature. Buried damage layers by proton implantation are used for efficient current funnelling. The CW threshold currents are 3.5–8.0 mA, at 3.7–4.2 V bias, for 10.30 μm diameter lasers. The lasing wavelengths are 845–848 nm.
Inspec keywords: semiconductor quantum wells; III-V semiconductors; semiconductor junction lasers; gallium arsenide
Other keywords:
Subjects: Design of specific laser systems; Semiconductor junctions; Lasing action in semiconductors; Semiconductor lasers; II-VI and III-V semiconductors
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