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Er3+ electroluminescence at 1.54 μm has been observed from p-n junction diodes fabricated from ≈ 1 μm Er doped GaAs layers produced by high energy ion implantation. These unique junctions are formed directly by the p-type conversion of the n-type substrate material within the implantation profile. The low efficiencies observed in these devices ( n ≈ 10−6) are believed to be related to the small fraction of the implanted Er in the Er3+ state.
Inspec keywords: III-V semiconductors; light emitting diodes; electroluminescence; ion implantation; gallium arsenide; erbium
Other keywords:
Subjects: Electroluminescence (condensed matter); Luminescent materials; Light emitting diodes; Semiconductor doping; II-VI and III-V semiconductors