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Er3+ electroluminescence at 1.54 μm has been observed from p-n junction diodes fabricated from ≈ 1 μm Er doped GaAs layers produced by high energy ion implantation. These unique junctions are formed directly by the p-type conversion of the n-type substrate material within the implantation profile. The low efficiencies observed in these devices ( n ≈ 10−6) are believed to be related to the small fraction of the implanted Er in the Er3+ state.
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