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1.54 μm electroluminescence in MeV ion implanted Er-doped GaAs

1.54 μm electroluminescence in MeV ion implanted Er-doped GaAs

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Er3+ electroluminescence at 1.54 μm has been observed from p-n junction diodes fabricated from ≈ 1 μm Er doped GaAs layers produced by high energy ion implantation. These unique junctions are formed directly by the p-type conversion of the n-type substrate material within the implantation profile. The low efficiencies observed in these devices ( n ≈ 10−6) are believed to be related to the small fraction of the implanted Er in the Er3+ state.

References

    1. 1)
      • A. Rolland , A. le Corre , P.N. Favennec , M. Gauneau , B. Lambert , D. Lecrosnier , H. L'Haridon , D. Moutonnet , C. Rochaix . Erbium-doped GaAs light-emitting diode at 1.54 μm. Electron. Lett. , 956 - 958
    2. 2)
      • P.S. Whitney , K. Uwai , H. Nakagome , K. Takahei . Erbium-doped GaAs light-emitting diodes emitting erbium f-shell luminescence at 1.54 μm. Electron. Lett. , 740 - 741
    3. 3)
      • Klein, P. B., Moore, F. G., Wilsey, N. D. and Dietrich, H. B.: Unpublished.
    4. 4)
      • P.B. Klein , G.SK. Pomrenke . Photoluminescence decay of 1.54 μm Er3+ emission in Si and III-V semiconductors. Electron. Lett. , 1502 - 1503
    5. 5)
      • B. Lambert , A. Le Corre , Y. Toudic , C. L'Homer , G. Grandpierre , M. Gauneau . Electrical and optical properties of rare earth dopants (Yb,Er) in n-type III-V (InP) semiconductors. J. Phys. Condens. Matter , 479 - 483
    6. 6)
      • J.P. Galtier , M.N. Pocholle , B. Charasse , J.P. Hirtz , B. Groussin , T. Benyattou , G. Guillot . 1.54 μm room-temperature electroluminescence of erbium-doped GaAs and GaAlAs grown by molecular beam epitaxy. Appl. Phys. Lett. , 2105 - 2107
    7. 7)
      • X. Zhao , K. Hirakawa , T. Ikoma . Appl. Phys. Lett.. Appl. Phys. Lett. , 712 - 714
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