Reliable 1.3 μm gain guided stripe lasers grown by MOCVD using ethyldimethylindium as the In source

Access Full Text

Reliable 1.3 μm gain guided stripe lasers grown by MOCVD using ethyldimethylindium as the In source

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

The first semiconductor laser in the GalnAsP materials system grown by MOCVD using ethyldimethylindium as the In source is reported. A 1.3 μm gain guided stripe laser structure with 5 μm wide stripes was fabricated. The devices showed excellent reliability, with negligible degradation measured during life testing at 50°C and 60°C over a period of 16000 h.

Inspec keywords: gallium compounds; indium compounds; reliability; life testing; gallium arsenide; vapour phase epitaxial growth; III-V semiconductors; semiconductor junction lasers

Other keywords: 60 C; reliability; 50 C; 16000 h; GaInAsP; semiconductor laser; 5 micron; ethyldimethylindium; gain guided stripe lasers; life testing; negligible degradation; MOCVD; 1.3 micron

Subjects: Reliability; Optoelectronics manufacturing; II-VI and III-V semiconductors; Maintenance and reliability; Testing; Lasing action in semiconductors; Production facilities and engineering; Surface treatment and coating techniques; Epitaxial growth; Semiconductor lasers; Design of specific laser systems

References

    1. 1)
      • J. Knauf , D. Schmitz , G. Strauch , H. Jürgenson , M. Heyen . Comparison of ethyldimethylindium (EDMIn) and trimethylindium (TMIn) for GaInAs and InP growth by LPMOVPE. J. Crystal Growth , 34 - 40
    2. 2)
      • K.L. Fry , C.P. Kuo , C.A. Larson , R.M. Cohen , G.B. String-Fellow . OMVPE growth of InP and Ga0.47In0.53As using ethyldimethylindium. J. Electron. Mater. , 91 - 96
    3. 3)
      • N. Puetz , G. Hillier , A.J. Springthorpe . The inverted horizontal reactor: growth of uniform InP and GaInAs by LPMOCVD. J. Electron. Mater. , 381 - 386
    4. 4)
      • P.K. York , K.J. Beernink , J. Kim , J.J. Coleman , G.E. Fernandez , C.M. Wayman . Ethyldimethylindium for the growth of InGaAs-GaAs strained-layer lasers by metalorganic chemical vapor deposition. Appl. Phys. Lett. , 2476 - 2478
    5. 5)
      • K.D. Chik . Analysis of the effects of recombination and leakage on the static properties of GaInAsP/InP stripe geometry lasers. J. Appl. Phys. , 2507 - 2513
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19900831
Loading

Related content

content/journals/10.1049/el_19900831
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading