Reliable 1.3 μm gain guided stripe lasers grown by MOCVD using ethyldimethylindium as the In source
The first semiconductor laser in the GalnAsP materials system grown by MOCVD using ethyldimethylindium as the In source is reported. A 1.3 μm gain guided stripe laser structure with 5 μm wide stripes was fabricated. The devices showed excellent reliability, with negligible degradation measured during life testing at 50°C and 60°C over a period of 16000 h.