Approximate analytical model for the poly-silicon thin film transistor

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Approximate analytical model for the poly-silicon thin film transistor

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© The Institution of Electrical Engineers
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A set of analytical equations that accurately model the large-signal current-voltage and charge-storage characteristics of the poly-silicon thin film transistor (TFT) has been developed. The model is based on theories of conduction in materials with an exponential distribution of states in the gap. The equations are suitable for incorporation into a circuit simulator capable of transient analysis of circuits, such as SPICE.

Inspec keywords: thin film transistors; silicon; semiconductor device models

Other keywords: SPICE; charge-storage characteristics; polysilicon TFT; large signal model current voltage characteristics; polycrystalline Si; thin film transistor; set of analytical equations; I/V characteristics; theories of conduction; model; exponential distribution of states; approximate analytical model; Q/V characteristics

Subjects: Elemental semiconductors; Other field effect devices; Semiconductor device modelling, equivalent circuits, design and testing

References

    1. 1)
      • T. Serikawa , S. Shirai , A. Okamoto , S. Suyama . A model of current-voltage characteristics in polycrystalline silicon thin film transistors. IEEE Trans. , 321 - 324
    2. 2)
      • P. Migliorato , D.B. Meakin . Material properties and characteristics of polysilicon transistors for large area electronics. Appl. Surf. Sci. , 353 - 371
    3. 3)
      • G. Fortunato , P. Migliorato . Journal of Applied Physics. Journal of Applied Physics
    4. 4)
      • J.E. Meyer . MOS models and circuit simulation. RCA Review , 42 - 63
    5. 5)
      • S.M. Sze . (1981) Physics of semiconductor devices.
    6. 6)
      • D.E. Ward , R.W. Dutton . A charge-orientated model for MOS transistor capacitances. IEEE J. Solid-State Circuits , 703 - 707
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