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Approximate analytical model for the poly-silicon thin film transistor

Approximate analytical model for the poly-silicon thin film transistor

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A set of analytical equations that accurately model the large-signal current-voltage and charge-storage characteristics of the poly-silicon thin film transistor (TFT) has been developed. The model is based on theories of conduction in materials with an exponential distribution of states in the gap. The equations are suitable for incorporation into a circuit simulator capable of transient analysis of circuits, such as SPICE.

References

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      • J.E. Meyer . MOS models and circuit simulation. RCA Review , 42 - 63
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      • S.M. Sze . (1981) Physics of semiconductor devices.
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      • D.E. Ward , R.W. Dutton . A charge-orientated model for MOS transistor capacitances. IEEE J. Solid-State Circuits , 703 - 707
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