New GaSb/AlSb/GaSb/AiSb/InAs/AiSb/InAs triple-barrier interband tunnelling diode

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New GaSb/AlSb/GaSb/AiSb/InAs/AiSb/InAs triple-barrier interband tunnelling diode

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© The Institution of Electrical Engineers
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A new GaSb/AlSb/GaSb/AlSb/InAs/AlSb/InAs triple-barrier interband tunnelling diode (TBIT) is proposed and demonstrated. A peak-current density as high as 7.2kA/cm2 and a peak-to-valley-current ratio of 10 at room temperature were exhibited. In this device resonant tunnelling effects occur for both the electron in the InAs conduction band and the light hole in the GaSb conduction band through the AlSb/GaSb/AlSb/InAs/AlSb triple-barrier structure. The tunnelling process is greatly diminished, indicating the quantisation effect for both electrons and light holes by narrowing the InAs well and the GaSb well. This triple-barrier structure is the first demonstrated tunnelling structure which utilises the resonant tunnelling effect of both electrons and holes.

Inspec keywords: negative resistance effects; gallium compounds; indium compounds; semiconductor junctions; III-V semiconductors; aluminium compounds; tunnel diodes

Other keywords: semiconductors; light holes; peak-to-valley-current ratio; electrons; GaSb-AlSb-GaSb-AlSb-InAs-AlSb-InAs; heterojunctions; quantisation effect; TBIT; peak-current density; triple-barrier interband tunnelling diode; room temperature; resonant tunnelling effects

Subjects: II-VI and III-V semiconductors; Semiconductor junctions; Junction and barrier diodes

References

    1. 1)
      • L.F. Luo , I. Beresford , W.I. Wang . Resonant tunneling in AlSb/InAs/AlSb double barrier structures. Appl. Phys. Lett. , 2320 - 2322
    2. 2)
      • R. Beresford , L.F. Luo , W.I. Wang . Resonant tunneling of holes in AlSb/GaSb/AlSb double-barrier heterostructures. Appl. Phys. Lett. , 694 - 695
    3. 3)
      • L. Esaki , L.L. Chang , E.E. Mendez . Polytype superlattices and multi-heterojunctions. Jpn. J. Appl. Phys. , L529 - L532
    4. 4)
      • L. Yang , J.F. Chen , A.Y. Cho . A new GaSb/AlSb/GaSb/AlSb/InAs double-barrier interband tunneling diode and its tunneling mechanism. J. Appl. Phys.
    5. 5)
      • H. Takaoka , C.A. Chang , E.E. Mendez , L.L. Chang , L. Esaki . GaSb-AlSb-InAs multi-heterojunctions. Physica , 741 - 743
    6. 6)
      • L.L. Chang , L. Esaki . Electronic properties of InAs-GaAs superlattices. Surf. Sci. , 70 - 89
    7. 7)
      • J.R. Soderstrom , D.H. Chow , T.C. Mcgill . A new negative differential resistance device based on resonant interband tunneling. Appl. Phys. Lett. , 1094 - 1096
    8. 8)
      • M. Sweeny , J. Xu . Resonant interband tunnel diodes. Appl. Phys. Lett. , 546 - 548
    9. 9)
      • R. Beresford , L.F. Luo , W.I. Wang . Negative differential resistance in AlGaSb/InAs single-barrier heterostructures at room temperature. Appl. Phys. Lett. , 1899 - 1901
    10. 10)
      • L.F. Luo , R. Beresford , W.I. Wang . Interband tunneling in polytype GaSb/AlSb/InAs heterostructures. Appl. Phys. Lett. , 2023 - 2025
    11. 11)
      • J.R. Soderstrom , D.H. Chow , T.C. Mcgill . Demonstration of large peak-to-valley current ratios in InAs/AlGaSb/InAs single barrier structures. Appl. Phys. Lett. , 1348 - 1350
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