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The effect of non-steady-state photovoltage in photoconductive crystals for high excitation frequencies is discussed. The theoretical analysis based on the widely accepted model of a photoconductor with one partially compensated donor level and a finite photoelectron lifetime is in reasonable agreement with the expirements on cubic BSO crystals. Average lifetimes of photocarners in the samples were estimated to be τ = 10−4 s for λ = 442nm and τ = 3 × 10−6s for λ = 663 nm.
Inspec keywords: bismuth compounds; crystals; photoconducting materials; photoconductivity
Other keywords:
Subjects: Photoconducting materials and properties; Photoconduction and photovoltaic effects; photodielectric effects