Strained layer AlGaAs-GaAs-InGaAs real-space transferred electron devices
Strained layer AlGaAs-GaAs-InGaAs real-space transferred electron devices
- Author(s): M.E. Favaro ; J.J. Alwan ; R.P. Bryan ; L.M. Miller ; J.J. Coleman ; J. Kim ; C.M. Wayman
- DOI: 10.1049/el:19900814
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- Author(s): M.E. Favaro 1 ; J.J. Alwan 1 ; R.P. Bryan 1 ; L.M. Miller 1 ; J.J. Coleman 1 ; J. Kim 2 ; C.M. Wayman 2
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View affiliations
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Affiliations:
1: Coordinated Science Laboratory and Compound Semiconductor Microelectronics Laboratory, University of Illinois at Urbana-Champaign, Urbana, USA
2: Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, USA
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Affiliations:
1: Coordinated Science Laboratory and Compound Semiconductor Microelectronics Laboratory, University of Illinois at Urbana-Champaign, Urbana, USA
- Source:
Volume 26, Issue 16,
2 August 1990,
p.
1264 – 1265
DOI: 10.1049/el:19900814 , Print ISSN 0013-5194, Online ISSN 1350-911X
Experimental results of two AlGaAs-GaAs real-space transferred electron devices, the negative resistance field-effect transistor and charge-injection transistor, which incorporates a strained layer In0.22Ga0.78As channel are reported. The negative differential resistance in the drain circuit has a drain current peak-to-valley ratio of more than 1200 at room temperature.
Inspec keywords: III-V semiconductors; aluminium compounds; negative resistance; indium compounds; gallium arsenide; field effect transistors
Other keywords:
Subjects: Other field effect devices; II-VI and III-V semiconductors
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