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The investigation of an AlGaAs/GaAs HBT in in which a heavily carbon doped base is grown by chemical beam epitaxy using trimethyl-Ga is reported. A planar technique which reduces surface recombination has been employed for selectively contacting the base region. A base width of 1000 Å and a high doping level of 7 × 1019cm−3 is used. The sheet resistance of the base is less than 100Ω/□. This transistor has a maximum current gain of 25 at a current density of 1.3 × 103A/cm2.
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