Novel gate voltage ramping technique for the characterisation of metal-oxide-semiconductor capacitor charge trapping properties
A novel technique is proposed to characterise the charge trapping properties of MOS capacitors by using the gate voltage ramping test. The parameter I=1−Ig(t)/Is(t + Δt) measured during gate voltage ramping reveals the dielectric charge trapping characteristics. Positive charge trapping before dielectric breakdown was observed using this technique. A comparison between I and flatband voltage shift, ΔVfb, indicates that I gives the same information as ΔVfb does at high stress fluences.