© The Institution of Electrical Engineers
A novel technique is proposed to characterise the charge trapping properties of MOS capacitors by using the gate voltage ramping test. The parameter I=1−Ig(t)/Is(t + Δt) measured during gate voltage ramping reveals the dielectric charge trapping characteristics. Positive charge trapping before dielectric breakdown was observed using this technique. A comparison between I and flatband voltage shift, ΔVfb, indicates that I gives the same information as ΔVfb does at high stress fluences.
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http://iet.metastore.ingenta.com/content/journals/10.1049/el_19900810
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