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Process dependence of interface state generation due to irradiation and hot carrier stress in rapid thermally nitrided thin gate oxides

Process dependence of interface state generation due to irradiation and hot carrier stress in rapid thermally nitrided thin gate oxides

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A study of the effects of nitridation time and temperature on the interface state generation in MOS devices with thin rapid thermally nitrided gate oxides is reported. A different process dependence was observed for interface state generation caused by X-ray irradiation and hot carrier stress. The discrepancy is explained using the structural changes at the interface during nitridation and some of the earlier defect generation models.

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