© The Institution of Electrical Engineers
A study of the effects of nitridation time and temperature on the interface state generation in MOS devices with thin rapid thermally nitrided gate oxides is reported. A different process dependence was observed for interface state generation caused by X-ray irradiation and hot carrier stress. The discrepancy is explained using the structural changes at the interface during nitridation and some of the earlier defect generation models.
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http://iet.metastore.ingenta.com/content/journals/10.1049/el_19900804
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