Low phase noise heterojunction bipolar transistor oscillator

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Low phase noise heterojunction bipolar transistor oscillator

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© The Institution of Electrical Engineers
Published

A low phase noise, heterojunction bipolar transistor (HBT) oscillator has been designed and fabricated for operation at X-band. The common emitter oscillator employs a high-Q dielectric resonator as the parallel feedback element between the base and collector terminals. Series capacitive feedback is used in the emitter to enhance the oscillator's negative output impedance. Single-sideband FM noise levels of −76dBc/Hz and −102dBc/Hz have been achieved at 1 kHz and 10kHz frequency offsets, respectively, for an 11.06GHz carrier frequency. This is one of the lowest phase noise levels ever reported for an X-band solid-state transistor oscillator.

Inspec keywords: dielectric resonators; microwave oscillators; microwave integrated circuits; electron device noise; heterojunction bipolar transistors; hybrid integrated circuits

Other keywords: solid-state transistor oscillator; DRO; X-band; common emitter oscillator; heterojunction bipolar transistor; parallel feedback element; 11.06 GHz; frequency offsets; SSB FM noise levels; negative output impedance; capacitive feedback; high-Q dielectric resonator; low phase noise; carrier frequency; HBT oscillator

Subjects: Solid-state microwave circuits and devices; Bipolar transistors; Hybrid integrated circuits; Other dielectric applications and devices; Oscillators

References

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      • Hayarma, N., Lesage, S.R., Madihian, M., Honjo, K.: `A low-noise Ku-band AlGaAs/GaAs HBT oscillator', IEEE MTT-S International Microwave Symp. Digest, 1988, p. 679–682.
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