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A low phase noise, heterojunction bipolar transistor (HBT) oscillator has been designed and fabricated for operation at X-band. The common emitter oscillator employs a high-Q dielectric resonator as the parallel feedback element between the base and collector terminals. Series capacitive feedback is used in the emitter to enhance the oscillator's negative output impedance. Single-sideband FM noise levels of −76dBc/Hz and −102dBc/Hz have been achieved at 1 kHz and 10kHz frequency offsets, respectively, for an 11.06GHz carrier frequency. This is one of the lowest phase noise levels ever reported for an X-band solid-state transistor oscillator.
Inspec keywords: dielectric resonators; microwave oscillators; microwave integrated circuits; electron device noise; heterojunction bipolar transistors; hybrid integrated circuits
Other keywords:
Subjects: Solid-state microwave circuits and devices; Bipolar transistors; Hybrid integrated circuits; Other dielectric applications and devices; Oscillators