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Low phase noise heterojunction bipolar transistor oscillator

Low phase noise heterojunction bipolar transistor oscillator

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© The Institution of Electrical Engineers
Published

A low phase noise, heterojunction bipolar transistor (HBT) oscillator has been designed and fabricated for operation at X-band. The common emitter oscillator employs a high-Q dielectric resonator as the parallel feedback element between the base and collector terminals. Series capacitive feedback is used in the emitter to enhance the oscillator's negative output impedance. Single-sideband FM noise levels of −76dBc/Hz and −102dBc/Hz have been achieved at 1 kHz and 10kHz frequency offsets, respectively, for an 11.06GHz carrier frequency. This is one of the lowest phase noise levels ever reported for an X-band solid-state transistor oscillator.

Inspec keywords: dielectric resonators; microwave oscillators; microwave integrated circuits; electron device noise; heterojunction bipolar transistors; hybrid integrated circuits

Other keywords: solid-state transistor oscillator; DRO; X-band; common emitter oscillator; heterojunction bipolar transistor; parallel feedback element; 11.06 GHz; frequency offsets; SSB FM noise levels; negative output impedance; capacitive feedback; high-Q dielectric resonator; low phase noise; carrier frequency; HBT oscillator

Subjects: Solid-state microwave circuits and devices; Bipolar transistors; Hybrid integrated circuits; Other dielectric applications and devices; Oscillators

References

    1. 1)
      • Khatibzadeh, M.A., Bayraktaroglu, B., Hudgens, R.D.: `High power and high efficiency monolithic HBT VCO circuit', GaAs IC Symp. Digest, 1989, p. 11–14.
    2. 2)
      • Leung, C.C., Snapp, C.P., Grande, V.: `A 0.5 μm silicon bipolar transistor for low phase noise oscillator applications up to 20 GHz', IEEE MTT-S Int. Microwave Symp. Digest, 1985, p. 383–386.
    3. 3)
      • Kim, M.E.: `12–40 GHz low harmonic distortion and phase noise performance of GaAs heterojunction bipolar transistors', GaAs IC Symp. Digest, 1988, p. 117–120.
    4. 4)
      • Agarwal, K.K.: `Dielectric resonator oscillators using GaAs/(GaAl)As heterojunction bipolar transistors', IEEE MTT-S Int. Microwave Symp. Digest, 1986, p. 95–98.
    5. 5)
      • Varian, K.R.: `Dielectric resonator oscillators at 4, 6, and 11 GHz', IEEE MTT-S Int. Microwave Symp. Digest, 1986, p. 87–90.
    6. 6)
      • Pucel, R.A.: `The GaAs FET oscillator—It's signal and noise performance', IEEE 40th Annual Frequency Control Symp. Digest, 1986, p. 385–391.
    7. 7)
      • Khanna, A.P.: `Parallel feedback FET DRO using 3-port S-parameters', IEEE MTT-S Int. Microwave Symp. Digest, 1984, p. 181–183.
    8. 8)
      • Hayarma, N., Lesage, S.R., Madihian, M., Honjo, K.: `A low-noise Ku-band AlGaAs/GaAs HBT oscillator', IEEE MTT-S International Microwave Symp. Digest, 1988, p. 679–682.
    9. 9)
      • Madihian, M., Shimawaki, H., Honjo, K.: `A 20–28 GHz AlGaAs/GaAs HBT monolithic oscillator', GaAs IC Symp. Digest, 1988, p. 113–116.
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