© The Institution of Electrical Engineers
A low phase noise, heterojunction bipolar transistor (HBT) oscillator has been designed and fabricated for operation at X-band. The common emitter oscillator employs a high-Q dielectric resonator as the parallel feedback element between the base and collector terminals. Series capacitive feedback is used in the emitter to enhance the oscillator's negative output impedance. Single-sideband FM noise levels of −76dBc/Hz and −102dBc/Hz have been achieved at 1 kHz and 10kHz frequency offsets, respectively, for an 11.06GHz carrier frequency. This is one of the lowest phase noise levels ever reported for an X-band solid-state transistor oscillator.
References
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Khatibzadeh, M.A., Bayraktaroglu, B., Hudgens, R.D.: `High power and high efficiency monolithic HBT VCO circuit', GaAs IC Symp. Digest, 1989, p. 11–14.
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Hayarma, N., Lesage, S.R., Madihian, M., Honjo, K.: `A low-noise Ku-band AlGaAs/GaAs HBT oscillator', IEEE MTT-S International Microwave Symp. Digest, 1988, p. 679–682.
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