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Improved InP/InGaAs/InP pin detector response using a transparent conductor contact

Improved InP/InGaAs/InP pin detector response using a transparent conductor contact

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© The Institution of Electrical Engineers
Published

The elimination of the spatial variation in the frequency response of large area pin photodetectors is described using indium tin oxide as a transparent contact. The I/V, C/V, and relative frequency response characteristics are reported for devices fabricated with and without the indium tin oxide. The devices have active area diameters of 25.0 and 80.0μm. Responsivities were 0.53 and 0.61 A/W for photodetectors with and without the ITO contact, respectively.

Inspec keywords: gallium arsenide; photodiodes; III-V semiconductors; indium compounds; p-i-n diodes; optical communication equipment

Other keywords: 25 micron; frequency response; 80 micron; photodiodes; InP-InGaAs-InP; p-i-n photodetector; InSnO; ITO contact; responsivities; C/V characteristic; uniform detector response; I/V characteristic; transparent conductor contact; large area pin photodetectors; active area diameters; semiconductors

Subjects: Electro-optical devices; Optical communication; II-VI and III-V semiconductors

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